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What is NTE29 & NTE30 Transistor Specifications about?

The NTE29 and NTE30 are complementary silicon power transistors designed for high power amplifier and switching applications. They are capable of handling high currents of up to 50 amps continuously with a current gain of 15-60 and a low saturation voltage of 1 volt or less at 25 amps of current. The transistors can operate at junction temperatures from -65 to 200 degrees Celsius and withstand high collector-emitter, collector-base, and emitter-base voltages.

Author

Ulises Xutuc

Language

EN