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About this Engineering article
Mask erosion during dry etching of deep features in III-V semiconductor structures by Lothian, J R; Ren, F; Pearton, S J is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Lothian, J R; Ren, F; Pearton, S J
- Publisher
- Institute of Physics; IOP Publishing; Institute of Physics Publishing (ISSN 0268-1242)
- Published
- 1992
- Field
- Engineering (Physical Sciences)