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Ecscrm Paper by staszkxy is a document available to read on EtoBox.

The document discusses the critical issue of edge terminations in 4H-SiC power devices, highlighting the complexities and challenges associated with their design and implementation compared to silicon devices. It reviews various edge termination architectures, including Field Guard Rings and Junction Termination Extensions, and emphasizes the importance of passivation and channel stopper design for achieving reliable high voltage performance. Advanced characterization methods, such as micro-OBIC, are recomm

Author
staszkxy
Language
EN