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About this Engineering article
Ultrahigh efficiency obtained with GaAs-on-insulator MESFET technology by Jenkins, T.J.; Kehias, L.; Parikh, P.; Ibbetson, J.; Mishra, U.; Docter, D.; Le, M.; Pusl, J.; Widman, D. is a Engineering article available to read on EtoBox.
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- Author
- Jenkins, T.J.; Kehias, L.; Parikh, P.; Ibbetson, J.; Mishra, U.; Docter, D.; Le, M.; Pusl, J.; Widman, D.
- Publisher
- IEEE; Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 0018-9200)
- Published
- 1999
- Field
- Engineering (Physical Sciences)