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Magnesium-doped InGaAs using (C2H5C5H4)2Mg: application to InP-based HBTs by M. Ohkubo; J. Osabe; T. Shiojima; T. Yamaguchi; T. Ninomiya is a Engineering article available to read on EtoBox.

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Heavily magnesium-doped p-type-InGaAs layers on InP(100) substrates were successfully grown, for the first time, by low-pressure metalorganic chemical vapor deposition (MOCVD) using bis-ethylcyclopentadienyl-magnesium, (C 2 H sCsH 4)2 Mg (EtCp2 Mg), as organometallic precursor for the Mg. It was experimentally verified that the room-temperature hole concentration of Mg into InGaAs increased with increase of the V/III ratio and decrease of the growth temperature. A maximum hole concentration of over 4 × 1019 cm -3 was obtained. The diffusion coefficient of Mg in InGaAs was experimentally derived to be 10-12 cm2/s at 800°C, which was comparable to that of Be. Finally, InP/InGaAs heterojunction bipolar transistors (HBTs) with Mg-doped bases were fabricated successfully. Measured maximum current gain was about 320 with a 90 nm thick base and a sheet resistance of the base layer of 1.28 kfl/sq.

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Author

M. Ohkubo; J. Osabe; T. Shiojima; T. Yamaguchi; T. Ninomiya

Publisher

Elsevier Science; Elsevier ; Elsevier BV (ISSN 0022-0248)

Published

1997

Language

EN

Field

Engineering (Physical Sciences)