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About this Engineering article
Surface-Reaction-Controlled Tungsten CVD Technology for0.1-μmLow-Resistive, Encroachment-Free CMOS-FET Applications by Y. Nakamura; N. Kobayashi; D. Hisamoto; K. Umeda; R. Nagai is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Y. Nakamura; N. Kobayashi; D. Hisamoto; K. Umeda; R. Nagai
- Publisher
- Institute of Pure and Applied Physics; Japan Society of Applied Physics; IOP Publishing (ISSN 0021-4922)
- Published
- 1996
- Field
- Engineering (Physical Sciences)
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