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About this Engineering article

Hot-carrier effects on radio frequency noise characteristics of LDD n-type metal–oxide–semiconductor field effect transistors by Kwan, W. S.; Chen, C. H.; Deen, M. J. is a Engineering article available to read on EtoBox.

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Author
Kwan, W. S.; Chen, C. H.; Deen, M. J.
Publisher
AVS (American Vacuum Society); American Vacuum Society; American Institute of Physics (ISSN 0734-2101)
Published
2000
Field
Engineering (Physical Sciences)

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