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This study investigates the degradation mechanisms of 1700V SiC MOSFETs under high temperature reverse bias (HTRB) testing at different temperatures, revealing that packaged-level devices experience significant breakdown voltage shifts due to contamination and interface defects. The research identifies mobile ion injection as a key factor in degradation and proposes solutions such as boron doping in the field oxide and a new termination structure to enhance reliability. Results indicate that while the degra

Author

Smriti

Language

EN