About this document
Bipolar Junction Transistors (BJTS) by Musa Magaula is a document available to read on EtoBox.
Power Bipolar Junction Transistors (bjts) have a wide range of I-V characteristics. A narrow emitter opening minimizes emitter current crowding. Multiple parallel base conductors - minimize parasitic resistance in series with the base. Wide base width - low beta. Lightly doped collector drift region - large breakdown voltage. Extended blocking voltage range.
- Author
- Musa Magaula
- Language
- EN