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Optical and structural characteristics of ZnO films grown on (0 0 0 1) sapphire substrates by ALD using DEZn and N2O by Ping-Yuan Lin; Jyh-Rong Gong; Ping-Cheng Li; Tai-Yuan Lin; Dong-Yuan Lyu; Der-Yuh Lin; Hung-Ji Lin; Ta-Ching Li; Kuo-Jen Chang; Wen-Jen Lin is a Engineering article available to read on EtoBox.

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Zinc oxide (ZnO) films were grown at 600 1C on (0 0 0 1) sapphire substrates by atomic layer deposition (ALD) using diethylzinc (DEZn) and nitrous oxide (N 2 O) as source precursors. In some cases, lowtemperature (LT) ZnO buffer layers were employed along with post-annealing or buffer-layer annealing for the optimization of ZnO growth. Based on the y to 2y X-ray diffraction (XRD) data, the as-grown ZnO films exhibit a preferred orientation with /0 0 0 1S ZnO being parallel to the /0 0 0 1S sapphire . Both postannealing and buffer-layer annealing were found to be very helpful for improving the optical properties of the ZnO films. Room temperature (RT) photoluminescence (PL) spectra of the ZnO films show strong near-band edge (NBE) emissions with completely quenched defect luminescence. The best ZnO films were achieved with a sharp neutral donor excitonic (D o X) emission as well as phonon replicas of free Aexcitons in the 10 K PL spectrum.

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Author

Ping-Yuan Lin; Jyh-Rong Gong; Ping-Cheng Li; Tai-Yuan Lin; Dong-Yuan Lyu; Der-Yuh Lin; Hung-Ji Lin; Ta-Ching Li; Kuo-Jen Chang; Wen-Jen Lin

Publisher

Elsevier Science; Elsevier ; Elsevier BV (ISSN 0022-0248)

Published

2008

Language

EN

Field

Engineering (Physical Sciences)