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About this Engineering article
Improvement of the growth of InxGa1−xAs on GaAs (001) using Te as surfactant by Grandjean, N.; Massies, J.; Delamarre, C.; Wang, L. P.; Dubon, A.; Laval, J. Y. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Grandjean, N.; Massies, J.; Delamarre, C.; Wang, L. P.; Dubon, A.; Laval, J. Y.
- Publisher
- American Institute of Physics; AIP Publishing (ISSN 0003-6951)
- Published
- 1993
- Language
- EN
- Field
- Engineering (Physical Sciences)