Skip to content

Opening book details…

About this Engineering article

Improvement in the bias stability of amorphous InGaZnO TFTs using an Al2O3 passivation layer by Huang, Sheng-Yao; Chang, Ting-Chang; Chen, Min-Chen; Chen, Te-Chih; Jian, Fu-Yen; Chen, Yu-Chun; Huang, Hui-Chun; Gan, Der-Shin is a Engineering article available to read on EtoBox.

It is typically read by researchers, students, and practitioners in Engineering.

Author
Huang, Sheng-Yao; Chang, Ting-Chang; Chen, Min-Chen; Chen, Te-Chih; Jian, Fu-Yen; Chen, Yu-Chun; Huang, Hui-Chun; Gan, Der-Shin
Publisher
Elsevier Science; Elsevier ; Elsevier BV (ISSN 0257-8972)
Published
2013
Language
EN
Field
Engineering (Physical Sciences)

More by Huang, Sheng-Yao; Chang, Ting-Chang; Chen, Min-Chen; Chen, Te-Chih; Jian, Fu-Yen; Chen, Yu-Chun; Huang, Hui-Chun; Gan, Der-Shin

Browse all works by Huang, Sheng-Yao; Chang, Ting-Chang; Chen, Min-Chen; Chen, Te-Chih; Jian, Fu-Yen; Chen, Yu-Chun; Huang, Hui-Chun; Gan, Der-Shin