About this Engineering article
Electrical characterization and material evaluation of zirconium oxynitride gate dielectric in TaN-gated NMOSFETs with high-temperature forming gas annealing by Nieh, R.E.; Chang Seok Kang; Hag-Ju Cho; Onishi, K.; Rino Choi; Krishnan, S.; Jeong Hee Han; Young-Hee Kim; Akbar, M.S.; Lee, J.C. is a Engineering article available to read on EtoBox.
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- Author
- Nieh, R.E.; Chang Seok Kang; Hag-Ju Cho; Onishi, K.; Rino Choi; Krishnan, S.; Jeong Hee Han; Young-Hee Kim; Akbar, M.S.; Lee, J.C.
- Publisher
- IEEE; Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 0018-9383)
- Published
- 2003
- Language
- EN
- Field
- Engineering (Physical Sciences)