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Can I read GaN buffer layer growth by MOCVD using a thermodynamic non-equilibrium model on EtoBox?
GaN buffer layer growth by MOCVD using a thermodynamic non-equilibrium model by C. Guarneros; V. Sánchez is a Engineering article available to read on EtoBox.
What is GaN buffer layer growth by MOCVD using a thermodynamic non-equilibrium model about?
In this work, a gallium nitride (GaN) buffer layer was grown on a sapphire substrate (a-Al 2 O 3 ) in a horizontal reactor by low pressure metal-organic chemical vapor deposition (LP-MOCVD). Trimethylgallium (TMGa) and ammonia (NH 3 ) were precursors of gallium and nitrogen, respectively, and hydrogen (H 2 ) was used as carrier gas. TMGa and NH 3 fluxes were kept constant, with flow rates of 3.36 mmole/min and 0.05 standard liter/min, respectively. The fluence of hydrogen was also kept constant with the flux rate of 4.5 standard liter/min. GaN was deposited at 550 C and 100 mbar. According to the X-ray diffraction spectra, a buffer layer was formed with a wurtzite structure, which is the stable phase. The thermodynamic affinities were estimated as A 1 1⁄4175.9 kJ/mole and A 2 1⁄4 62.88 kJ/ mole.
Who reads GaN buffer layer growth by MOCVD using a thermodynamic non-equilibrium model?
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- C. Guarneros; V. Sánchez
- Publisher
- Elsevier Science; Elsevier ; Elsevier Ltd.; Elsevier BV (ISSN 0042-207X)
- Published
- 2010
- Language
- EN
- Field
- Engineering (Physical Sciences)