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Electron - 2024 - Li - Ion Migration in 3D Metal Halide Perovskite Field Effect Transistors by alok otta is a document available to read on EtoBox.

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This review article discusses the challenges posed by ion migration in 3D metal halide perovskite field effect transistors (FETs), which affects device performance and stability. It explains the mechanisms of ion migration, including activation energy and migration pathways, and summarizes strategies to suppress this phenomenon. The article concludes with insights into the future potential of 3D perovskite FETs in electronic applications.

Author

alok otta

Language

EN