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CMOS Fabrication Process Report by yth is a document available to read on EtoBox.

The document summarizes the CMOS fabrication process using n-well technology. It involves growing a thick oxide layer on a p-type silicon substrate, then selectively etching areas to expose the silicon surface for transistor creation. A thin gate oxide is grown, then a polysilicon layer is deposited and patterned to form gates. Lightly doping the substrate forms drain and source junctions. An insulating oxide layer is deposited, contacts are etched, and aluminum interconnects are evaporated and patterned to

Author

yth

Language

EN