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The L497XA series of high current switching regulator ICs exploit multipower-bcd technology to achieve very high output currents with low power dissipation. The technology architecture is based on the vertical DMOS silicon gate process that allows a channel length of 1. Micron. Using a junction isolation technique it has been possible to mix on the same chip Bipolar and CMOS transistors along with the DMOS power components.

Author
Ardvaak
Language
EN

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