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UWB Amplifier Design with pHEMT Technology by AJER JOURNAL is a document available to read on EtoBox.

What is UWB Amplifier Design with pHEMT Technology about?

1) The document describes the design of an ultra wideband low noise amplifier using a pseudomorphic high electron mobility transistor. 2) Key aspects of the design include using a stepped impedance stub for input matching to achieve flat gain across the bandwidth of 3.1-10.6 GHz, minimized input and output return loss, and a low noise figure of less than 2 dB. 3) Simulation and measurement results show the amplifier achieves a maximum gain of over 9 dB across the bandwidth with input and output reflectio

Author

AJER JOURNAL

Language

EN