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What is Type II Short-Circuit Failure in IGBT about?

This document investigates the type II short-circuit failure mechanism in trench gate IGBT devices through simulations and experiments. It identifies that high hole current along the trench gate restructures the electric field, leading to a dynamic peak voltage that causes gate oxide breakdown. An optimization structure is proposed to reduce trench gate depth, thereby improving short-circuit robustness by suppressing peak voltage.

Author

Kay Taiwo

Language

EN