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About this Engineering article
Surface prefunctionalization of SiO 2 to modify the etch per cycle during plasma-assisted atomic layer etching by Gasvoda, Ryan J.; Verstappen, Yuri G. P.; Wang, Scott; Hudson, Eric A.; Agarwal, Sumit is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Gasvoda, Ryan J.; Verstappen, Yuri G. P.; Wang, Scott; Hudson, Eric A.; Agarwal, Sumit
- Publisher
- AVS (American Vacuum Society); American Vacuum Society; American Institute of Physics (ISSN 0734-2101)
- Published
- 2019
- Language
- EN
- Field
- Engineering (Physical Sciences)