About this scholarly article

2020 IEEE International Solid- State Circuits Conference - (ISSCC) - 22.1 A 1.1V 16GB 640GB/s HBM2E DRAM with a Data-Bus Window-Extension Technique and a Synergetic On-Die ECC Scheme by Oh, Chi-Sung; Chun, Ki Chul; Byun, Young-Yong; Kim, Yong-Ki; Kim, So-Young; Ryu, Yesin; Park, Jaewon; Kim, Sinho; Cha, Sanguhn; Shin, Donghak; Lee, Jungyu; Son, Jong-Pil; Ho, Byung-Kyu; Cho, Seong-Jin; Kil, Beomyong; Ahn, Sungoh; Lim, Baekmin; Park, Yongsik; Lee, Kijun; Lee, Myung-Kyu; Baek, Seungduk; Noh, Junyong; Lee, Jae-Wook; Lee, Seungseob; Kim, Sooyoung; Lim, Botak; Choi, Seouk-Kyu; Kim, Jin-Guk; Choi, Hye-In; Kwon, Hyuk-Jun; Kong, Jun Jin; Sohn, Kyomin; Kim, Nam Sung; Park, Kwang-Il; Lee, Jung-Bae is a scholarly article available to read on EtoBox.

Author

Oh, Chi-Sung; Chun, Ki Chul; Byun, Young-Yong; Kim, Yong-Ki; Kim, So-Young; Ryu, Yesin; Park, Jaewon; Kim, Sinho; Cha, Sanguhn; Shin, Donghak; Lee, Jungyu; Son, Jong-Pil; Ho, Byung-Kyu; Cho, Seong-Jin; Kil, Beomyong; Ahn, Sungoh; Lim, Baekmin; Park, Yongsik; Lee, Kijun; Lee, Myung-Kyu; Baek, Seungduk; Noh, Junyong; Lee, Jae-Wook; Lee, Seungseob; Kim, Sooyoung; Lim, Botak; Choi, Seouk-Kyu; Kim, Jin-Guk; Choi, Hye-In; Kwon, Hyuk-Jun; Kong, Jun Jin; Sohn, Kyomin; Kim, Nam Sung; Park, Kwang-Il; Lee, Jung-Bae

Publisher

IEEE

Published

2020