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Semi-polar Nitride Surfaces and Heterostructures by André Strittmatter; John E. Northrup; Noble M. Johnson; Mikhail V. Kisin; Philippe Spiberg; Hussein El-Ghoroury; Alexander Usikov; Alexander Syrkin is a Physics and Astronomy article available to read on EtoBox.

What is Semi-polar Nitride Surfaces and Heterostructures about?

## Abstract This paper reviews semi‐polar GaN surfaces, of interest for light emitting devices, from both theoretical and experimental perspectives. Theoretical results on polarization charges at InGaN/GaN heterointerfaces and In incorporation into InGaN films are presented for polar (0001), semi‐polar (1122) and non‐polar (1100) surfaces. Specific features of semi‐polar InGaN/GaN structures are emphasized which can be beneficial for improving optical and transport properties of quantum‐well‐based light emitting devices. The analysis favours semi‐polar surfaces such as the (1122) surface as growth plane for long‐wavelength light emitters. Therefore, the experimental sections emphasize progress towards long‐wavelength LEDs and lasers by growth of InGaN/AlGaN/GaN(1122) heterostructures on large‐area GaN(1122)/m‐sapphire templates. The current status of such templates as grown by hydride vapour phase epitaxy is presented. The implementation of an epitaxial lateral overgrowth method on such templates to improve device performances is demonstrated.

Who reads Semi-polar Nitride Surfaces and Heterostructures?

Author

André Strittmatter; John E. Northrup; Noble M. Johnson; Mikhail V. Kisin; Philippe Spiberg; Hussein El-Ghoroury; Alexander Usikov; Alexander Syrkin

Publisher

John Wiley and Sons; Wiley (John Wiley & Sons); John Wiley & Sons Ltd.; Wiley (ISSN 0370-1972)

Published

2010

Language

EN

Field

Physics and Astronomy (Physical Sciences)