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Scalable and Stable Ferroelectric Non-Volatile Memory at > 500 $^\circ$C by Pradhan, Dhiren K.; Moore, David C.; Kim, Gwangwoo; He, Yunfei; Musavigharavi, Pariasadat; Kim, Kwan-Ho; Sharma, Nishant; Han, Zirun; Du, Xingyu; Puli, Venkata S.; Stach, Eric A.; Kennedy, W. Joshua; Glavin, Nicholas R.; Olsson, Roy H.; Jariwala, Deep is a scholarly article available to read on EtoBox.

What is Scalable and Stable Ferroelectric Non-Volatile Memory at > 500 $^\circ$C about?

Non-volatile memory (NVM) devices that reliably operate at temperatures above 300 $^\circ$C are currently non-existent and remains a critically unmet challenge in the development of high-temperature (T) resilient electronics, necessary for many emerging, complex computing and sensing in harsh environments. Ferroelectric Al$_x$Sc$_{1-x}$N exhibits strong potential for utilization in NVM devices operating at very high temperatures (> 500 $^\circ$C) given its stable and high remnant polarization (PR) above 100 $\mu$C/cm$^2$ with demonstrated ferroelectric transition temperature (TC) > 1000 $^\circ$C. Here, we demonstrate an Al$_{0.68}$Sc$_{0.32}$N ferroelectric diode based NVM device that can reliably operate with clear ferroelectric switching up to 600 $^\circ$C with distinguishable On and Off states. The coercive field (EC) from the Pulsed I-V measurements is found to be -5.84 (EC-) and +5.98 (EC+) (+/- 0.1) MV/cm at room temperature (RT) and found to decrease with increasing temperature up to 600 $^\circ$C. The devices exhibit high remnant polarizations (> 100 $\mu$C/cm$^2$) which are stable at high temperatures. At 500 $^\circ$C, our devices show 1 million read cycles and stable O

Author

Pradhan, Dhiren K.; Moore, David C.; Kim, Gwangwoo; He, Yunfei; Musavigharavi, Pariasadat; Kim, Kwan-Ho; Sharma, Nishant; Han, Zirun; Du, Xingyu; Puli, Venkata S.; Stach, Eric A.; Kennedy, W. Joshua; Glavin, Nicholas R.; Olsson, Roy H.; Jariwala, Deep

Published

2023

Language

EN