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This document contains the MOSFET and BJT simulation report of Sidney Hyuga. [1] It details the procedures and results of simulations performed to analyze the characteristics and switching behavior of these transistors. Key parameters of the 2N7000 MOSFET and 2N2222 BJT were obtained from their datasheets. [2] Transfer, output characteristics and switching transients were simulated and analyzed. The MOSFET was found to have slower switching times than the BJT due to its capacitances and higher delay/rise an

Author

Jimmy Macharia

Language

EN