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Etching Magnetic Materials with CO/NH3 Plasma by Karthik Gopal is a document available to read on EtoBox.
This document summarizes research on etching magnetic materials like Co, Fe, and Ni using a CO/NH3 gas plasma. Key findings include: 1) High etch rates of 45-130 nm/min were achieved for magnetic materials using this plasma, with the rate depending on plasma density and ion energy. 2) Ti and Ta masks achieved a selectivity of 6-16 times over the magnetic materials due to surface hardening from nitridation, carbonization, or oxidation during etching. 3) The etching process was applied to tunneling magne
- Author
- Karthik Gopal
- Language
- EN