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Crystallization of low dislocation density GaN by high-pressure solution and HVPE methods by I. Grzegory; B. Łucznik; M. Boćkowski; S. Porowski is a Engineering article available to read on EtoBox.

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The growth of GaN from solution in gallium under high N 2 pressure results in very low-dislocation density (o100 cm À2 ) crystals usually in the form of hexagonal platelets, but of size limited to 1 cm (lateral) and 100 mm (thickness). Nevertheless, even with such small and thin substrates, the blue-violet lasers with optical power as high as 100-200 mW are reproducibly constructed. Deposition of GaN by HVPE on the pressure grown plate-like or needle-like crystals allows stable crystallization (in terms of flatness of the crystallization front and uniformity of the new grown material) at a rate of about 100 mm/h on both types of seeds. For the needlelike seeds, stable crystallization by HVPE is possible also in multiple growth processes resulting in bulk prismatic crystals with diameter exceeding 5 mm. The crystallization by HVPE on the high-pressure seeds is analyzed with the use of defect selective etching and X-ray data for thick (a few of mm) platelets grown on the plate-like seeds, prismatic bulk crystals grown on needle-like seeds and the cross-section samples sliced from the bulk material in different crystallographic orientations. The results of application of the new grown

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Author

I. Grzegory; B. Łucznik; M. Boćkowski; S. Porowski

Publisher

Elsevier Science; Elsevier ; Elsevier BV (ISSN 0022-0248)

Published

2007

Language

EN

Field

Engineering (Physical Sciences)