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About this Engineering article
High-frequency Properties of Four-terminal Field-effect Transistors by Cobbold, R.S.C. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Cobbold, R.S.C.
- Publisher
- Institution of Electrical Engineers; Institution of Electrical Engineers (IEE); Institution of Engineering and Technology (IET) (ISSN 0020-3270)
- Published
- 1966
- Field
- Engineering (Physical Sciences)