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High frequency vertical InAs nanowire MOSFETs integrated on Si substrates by Sofia Johansson; Sepideh Gorji Ghalamestani; Mikael Egard; Mattias Borg; Martin Berg; Lars-Erik Wernersson; Erik Lind is a Engineering article available to read on EtoBox.

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## Abstract RF and DC characterization of vertical InAs nanowire MOSFET on Si substrates are presented. Nanowire arrays are epitaxially integrated on Si substrates by use of a thin InAs buffer layer. For device fabrication, high‐k HfO~2~ gate dielectric and wrap‐gates are used. Post‐deposition annealing of the high‐k is evaluated by comparing one annealed and one not‐annealed sample. The annealed sample show better DC characteristics in terms of transconductance, __g~m~__ = 155 mS/mm, and on‐current, __I__~__on__~ = 550 mA/mm. Box plots of on‐current, on‐resistance and transconductance for all 190‐nanowire‐array transistors on the annealed sample suggest that the electrical properties of the nanowires are preserved when scaling the nanowire diameter. Finally, high frequency characterisation yields a unity current gain cut‐off frequency of __f~t~__ = 9.3 GHz for the annealed sample and __f~t~__ = 2.0 GHz for the not‐annealed sample. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Who reads High frequency vertical InAs nanowire MOSFETs integrated on Si substrates?

Author

Sofia Johansson; Sepideh Gorji Ghalamestani; Mikael Egard; Mattias Borg; Martin Berg; Lars-Erik Wernersson; Erik Lind

Publisher

John Wiley and Sons; Wiley (John Wiley & Sons); Wiley - V C H Verlag GmbbH & Co.; Wiley (ISSN 1862-6351)

Published

2011

Language

EN

Field

Engineering (Physical Sciences)