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The Mechanisms Behind Extreme Susceptibility of Photon Avalanche Emission to Quenching by Majak, Martyna; Misiak, Malgorzata; Bednarkiewicz, Artur is a scholarly article available to read on EtoBox.

What is The Mechanisms Behind Extreme Susceptibility of Photon Avalanche Emission to Quenching about?

The photon avalanche (PA) process that emerges in lanthanide-doped crystals yields a threshold and highly nonlinear (of the power law order > 5) optical response to photoexcitation. PA emission is the outcome of excited-state absorption combined with a cross-relaxation process, which creates positive and efficient energy looping. In consequence, this combination of processes should be highly susceptible to small perturbations in energy distribution and thus can be hindered by other competitive 'parasite' processes such as energy transfer (ET) to quenching sites. Although luminescence quenching is a well-known phenomenon, the exact mechanisms of susceptibility of PA to resonant energy transfer (RET) remain poorly understood limiting practical applications. A deeper understanding of these mechanisms may pave the way to new areas of PA exploitation. This study focuses on the investigation of the LiYF$_{4}$:3%Tm$^{3+}$ PA system co-doped with $Nd^{3+}$ acceptor ions, which was found to impact both the looping and emitting levels and thus to effectively disrupt PA emission, causing an increase in the PA threshold ($I_{th}$) and a decrease in PA nonlinearity ($S_{max}$). Our complementar

Author

Majak, Martyna; Misiak, Malgorzata; Bednarkiewicz, Artur

Published

2024

Language

EN