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About this Engineering article
High external efficiency (36%) 5-μm mesa isolated GaAs quantum well laser by organometallic vapor phase epitaxy by Welch, D. F.; Schaus, C. F.; Shealy, J. R. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Welch, D. F.; Schaus, C. F.; Shealy, J. R.
- Publisher
- American Institute of Physics; AIP Publishing (ISSN 0003-6951)
- Published
- 1985
- Field
- Engineering (Physical Sciences)
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