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Experimental study of total ionizing dose effect on SiC MOSFETs at temperature from −233 °C to 175 °C by Qingkui Yu; Shuang Cao; He Lv; Yi Sun; Rigen Mo; Qianyuan Wang; Bo Mei; Hongwei Zhang; Chaoming Liu; Xuefeng Yu is a Engineering article available to read on EtoBox.
What is Experimental study of total ionizing dose effect on SiC MOSFETs at temperature from −233 °C to 175 °C about?
The influence of temperature on the total ionizing dose response of silicon carbide (SiC) metal-oxide-semiconductor filed effect transistors (MOSFETs) was experimentally studied by γ-rays irradiation at temperatures ranging from −233 °C to 175 °C. Electrical parameters were investigated with Current-Voltage (I-V) measurements. Results showed that the threshold voltage shifted toward negative post-irradiation due to the radiation-induced oxide trapped charges. The shift of threshold voltage was a function of irradiation temperature. The shift of threshold voltage increased as temperature decreased. The reason was that there were less annealing for the radiation-induced oxide trapped charges at low temperatures.
Who reads Experimental study of total ionizing dose effect on SiC MOSFETs at temperature from −233 °C to 175 °C?
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Qingkui Yu; Shuang Cao; He Lv; Yi Sun; Rigen Mo; Qianyuan Wang; Bo Mei; Hongwei Zhang; Chaoming Liu; Xuefeng Yu
- Publisher
- Elsevier BV
- Published
- 2022
- Language
- EN
- Field
- Engineering (Physical Sciences)