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About this Materials Science article

Formation mechanism of amorphous layer at the interface of Si(111) substrate and AlN buffer layer for GaN by Guiqing Hu; Xiang Kong; Yiqian Wang; Li Wan; Xiaofeng Duan; Yuan Lu; Xianglin Liu is a Materials Science article available to read on EtoBox.

It is typically read by researchers, students, and practitioners in Materials Science.

Author
Guiqing Hu; Xiang Kong; Yiqian Wang; Li Wan; Xiaofeng Duan; Yuan Lu; Xianglin Liu
Publisher
Springer; Springer-Verlag; Chapman & Hall; Springer Science and Business Media LLC (ISSN 0261-8028)
Published
2003
Field
Materials Science (Physical Sciences)

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