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Effect of post-deposition annealing on the performance of D.C. sputtered Cu2SnSe3 thin films by Dong-Hau Kuo; Wei-Di Haung; Ying-Sheng Huang; Jiun-De Wu; Yan-Jih Lin is a Engineering article available to read on EtoBox.

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Cost-effective Cu 2 SnSe 3 thin films for the absorption layer of solar cells were prepared by D.C. sputtering. Different sputtering targets were fabricated by sintering the different mixtures of Cu 2 Se and SnSe 2 powders. SnSe 2 instead of commercially available SnSe was self-synthesized and used for thin-film solar cells for the first time. With our approach, Cu 2 SnSe 3 thin films can be treated at higher temperatures for the benefit of larger grain size, which is an important factor for the performance of solar cells. The effects of target composition and annealing temperature on the properties of Cu 2 SnSe 3 thin films were investigated. Structure, surface morphology, composition, and electrical and optical properties at different process conditions were measured. After 500 °C annealing, 400 °C-sputtered films can display with the direct band gap of 0.84 eV and has an electrical resistivity of ~0.18 Ω cm, absorption coefficient of 10 4 -10 5 cm -1 , carrier concentration of ~10 19 cm -3 , and electrical mobility of 3-10 cm 2 /V s.

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Author

Dong-Hau Kuo; Wei-Di Haung; Ying-Sheng Huang; Jiun-De Wu; Yan-Jih Lin

Publisher

Elsevier Science; Elsevier ; Elsevier BV (ISSN 0257-8972)

Published

2010

Language

EN

Field

Engineering (Physical Sciences)