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GT30J324 IGBT Transistor Datasheet by GITANOSOFT GARCIA is a document available to read on EtoBox.

What is GT30J324 IGBT Transistor Datasheet about?

This document summarizes the specifications and characteristics of the GT30J324 insulated gate bipolar transistor (IGBT) silicon chip from Toshiba. Key features include its enhancement-mode operation, fast switching up to 50 kHz, low saturation voltage of 2.0V typical, and inclusion of a free wheeling diode. Maximum ratings include 600V collector-emitter voltage, 30A collector current, and 150°C junction temperature. Electrical characteristics include low gate leakage current, short switching times down to

Author

GITANOSOFT GARCIA

Language

EN