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About this Engineering article
Properties of hot carrier induced traps in MOSFETs characterized by the floating-gate technique by Dominique Vuillaume; Brian S. Doyle is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Dominique Vuillaume; Brian S. Doyle
- Publisher
- Elsevier Science; Elsevier ; Elsevier Ltd.; Elsevier BV (ISSN 0038-1101)
- Published
- 1992
- Language
- EN
- Field
- Engineering (Physical Sciences)