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Fabrication of two-dimensional p–n junctions formed by compensation doping of p-modulation doped GaAs/InyGa1−yAs/AlxGa1−x As heterostructures by D. Reuter; C. Werner; C. Riedesel; A.D. Wieck; D. Schuster; W. Hansen is a Physics and Astronomy article available to read on EtoBox.

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We have fabricated two-dimensional p-n junctions by local Si-implantation doping of a p-modulation doped GaAs=InyGa1-yAs=AlxGa1-xAs heterostructure. The base material has at 300 K a hole density of p = 7 × 10 11 cm -2 and the mobility is 200 cm 2 =Vs. The local compensation doping was done by focused ion beam implantation of Si and the resulting two-dimensional electron gas had a carrier density of n = 5 × 10 11 cm -2 with a mobility of 4100 cm 2 =Vs. The current-voltage characteristic shows clear rectifying behavior. The capacitance of the junctions is 0:21 fF= m and depends only weakly on the reverse bias. Electro-luminescence can be observed at room temperature as well as at low temperatures.

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Author

D. Reuter; C. Werner; C. Riedesel; A.D. Wieck; D. Schuster; W. Hansen

Publisher

Elsevier Science; Elsevier ; Elsevier BV (ISSN 1386-9477)

Published

2004

Language

EN

Field

Physics and Astronomy (Physical Sciences)