Opening book details…
About this Engineering article
Realizing high voltage SJ-LDMOS with non-uniform N-buried layer by Wanjun Chen; Bo Zhang; Zhaoji Li is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Wanjun Chen; Bo Zhang; Zhaoji Li
- Publisher
- Elsevier Science; Elsevier ; Elsevier Ltd.; Elsevier BV (ISSN 0038-1101)
- Published
- 2008
- Language
- EN
- Field
- Engineering (Physical Sciences)