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Toward Ultralow-Power Computing at Exteme with Silicon Carbide (SiC) Nanoelectromechanical Logic (Invited Paper) by Swarup Bhunia; Vaishnavi Ranganathan; Tina He; Srihari Rajgopal; Rui Yang; Mehran Mehregany; X.-L Feng is a scholarly article available to read on EtoBox.

What is Toward Ultralow-Power Computing at Exteme with Silicon Carbide (SiC) Nanoelectromechanical Logic (Invited Paper) about?

Growing number of important application areas, including automotive and industrial applications as well as space, avionics, combustion engine, intelligent propulsion systems, and geo-thermal exploration require electronics that can work reliable at extreme conditions -in particular at a temperature > 250°C and at high radiation (1-30 Mrad), where conventional electronics fail to work reliably. Traditionally, existing wideband-gap semiconductors, e.g., silicon carbide (SiC) transistorbased electronics have been considered most viable for high temperature and high radiation applications. However, the largesize, high threshold voltage, low switching speed and high leakage current make logic design with these devices unattractive.Additionally, the leakage current markedly increases at high temperature (in the range of 10 μA for a 2-input NAND gate), which induces self-heating effect and makes power delivery at high temperature very challenging. To address these issues, in this paper we present a computing platform for lowpower reliable operation at extreme environment using SiC electromechanical switches. We show that a device-circuitarchitecture co-design approach can provide reliable

Author

Swarup Bhunia; Vaishnavi Ranganathan; Tina He; Srihari Rajgopal; Rui Yang; Mehran Mehregany; X.-L Feng

Published

1970

Language

EN