Opening book details…
Can I read Analysis of two-dimensional effects on subthreshold current in submicron MOS transistors on EtoBox?
Analysis of two-dimensional effects on subthreshold current in submicron MOS transistors by Ayhan A Mutlu; Norman G Gunther; Mahmud Rahman is a Engineering article available to read on EtoBox.
What is Analysis of two-dimensional effects on subthreshold current in submicron MOS transistors about?
In short channel devices, the dependence of subthreshold current on drain induced barrier lowering, substrate bias, channel length, and temperature is modeled. NMOS devices down to effective channel length of 0.13 lm are considered. The model, based on drift-diffusion theory, accurately predicts such dependence as verified by results obtained using this model when compared with those obtained with numerical device simulators.
Who reads Analysis of two-dimensional effects on subthreshold current in submicron MOS transistors?
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Ayhan A Mutlu; Norman G Gunther; Mahmud Rahman
- Publisher
- Elsevier Science; Elsevier ; Elsevier Ltd.; Elsevier BV (ISSN 0038-1101)
- Published
- 2002
- Language
- EN
- Field
- Engineering (Physical Sciences)
More by Ayhan A Mutlu; Norman G Gunther; Mahmud Rahman
Browse all works by Ayhan A Mutlu; Norman G Gunther; Mahmud Rahman