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The Hall effect and hole densities in high Tc GaMnAs thin films by Edmonds, K. W.; Wang, K. Y.; Campion, R. P.; Neumann, A. C.; Foxon, C. T.; Gallagher, B. L.; Main, P. C. is a scholarly article available to read on EtoBox.

What is The Hall effect and hole densities in high Tc GaMnAs thin films about?

By studying the Hall effect in a series of low resistivity Ga1-xMnxAs samples, accurate values for the hole density p, Mn concentration x, and Curie temperature Tc are obtained over the range 0.015=<x=<0.08. The hole density corresponds to 90% of the Mn concentration at low x, and has a maximum value of 1.0x10-27 m-3 when Tc=125K for x=0.06. This data allows the first meaningful comparison of mean field predicted Curie temperatures with experiment over a wide range of x. The theory is in qualitative agreement with experiment, but overestimates Tc at large x and underestimates TC at low x.

Author

Edmonds, K. W.; Wang, K. Y.; Campion, R. P.; Neumann, A. C.; Foxon, C. T.; Gallagher, B. L.; Main, P. C.

Published

2002

Language

EN