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About this Engineering article
The inverse-narrow-width effect of LOCOS isolated n-MOSFET in a high-concentration p-well by Ohe, K.; Yabu, T.; Kugo, S.; Umimoto, H.; Odanaka, S. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Ohe, K.; Yabu, T.; Kugo, S.; Umimoto, H.; Odanaka, S.
- Publisher
- IEEE; Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 0741-3106)
- Published
- 1992
- Field
- Engineering (Physical Sciences)
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