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Can I read Exploring an Approach toward the Intrinsic Limits of GaN Electronics on EtoBox?
Exploring an Approach toward the Intrinsic Limits of GaN Electronics by Jiang, Sheng; Cai, Yuefei; Feng, Peng; Shen, Shuoheng; Zhao, Xuanming; Fletcher, Peter; Esendag, Volkan; Lee, Kean; Wang, Tao is a Engineering article available to read on EtoBox.
What is Exploring an Approach toward the Intrinsic Limits of GaN Electronics about?
To fully exploit the advantages of GaN for electronic devices, a critical electric field that approaches its theoretical value (3 MV/cm) is desirable but has not yet been achieved. It is necessary to explore a new approach toward the intrinsic limits of GaN electronics from the perspective of epitaxial growth. By using a novel two-dimensional growth mode benefiting from our high-temperature AlN buffer technology, which is different from the classic two-step growth approach, our high-electron-mobility transistors (HEMTs) demonstrate an extremely high breakdown field of 2.5 MV/cm approaching the theoretical limit of GaN and an extremely low off-state buffer leakage of 1 nA/mm at a bias of up to 1000 V. Furthermore, our HEMTs also exhibit an excellent figure-of-merit (/) of 5.13 × 10 V/Ω·cm.
Who reads Exploring an Approach toward the Intrinsic Limits of GaN Electronics?
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Jiang, Sheng; Cai, Yuefei; Feng, Peng; Shen, Shuoheng; Zhao, Xuanming; Fletcher, Peter; Esendag, Volkan; Lee, Kean; Wang, Tao
- Publisher
- American Chemical Society; American Chemical Society (ACS) (ISSN 1944-8244)
- Published
- 2020
- Language
- EN
- Field
- Engineering (Physical Sciences)