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Can I read High gain, large area, and solar blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates on EtoBox?
High gain, large area, and solar blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates by Pramod Reddy; M. Hayden Breckenridge; Qiang Guo; Andrew Klump; Dolar Khachariya; Spyridon Pavlidis; Will Mecouch; Seiji Mita; Baxter Moody; James Tweedie; Ronny Kirste; Erhard Kohn; Ramon Collazo; Zlatko Sitar is a Engineering article available to read on EtoBox.
What is High gain, large area, and solar blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates about?
We demonstrate large area (25 000 μm2) Al-rich AlGaN-based avalanche photodiodes (APDs) grown on single crystal AlN substrates operating with differential (the difference in photocurrent and dark current) signal gain of 100 000 at 90 pW (<1 μW cm−2) illumination with very low dark currents <0.1 pA at room temperature under ambient light. The high gain in large area AlGaN APDs is attributed to a high breakdown voltage at 340 V, corresponding to very high breakdown fields ∼9 MV cm−1 as a consequence of low threading and screw dislocation densities 280 nm, establishing solar blindness of the device.
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- Author
- Pramod Reddy; M. Hayden Breckenridge; Qiang Guo; Andrew Klump; Dolar Khachariya; Spyridon Pavlidis; Will Mecouch; Seiji Mita; Baxter Moody; James Tweedie; Ronny Kirste; Erhard Kohn; Ramon Collazo; Zlatko Sitar
- Publisher
- American Institute of Physics; AIP Publishing (ISSN 0003-6951)
- Published
- 2020
- Language
- EN
- Field
- Engineering (Physical Sciences)