About this document

Si9420DY MOSFET Datasheet by Jean-Pierre Tremblay is a document available to read on EtoBox.

The document provides specifications for the Si9420DY N-channel enhancement-mode MOSFET from Siliconix. Some key specifications include: - Continuous drain current of 1.0A at a gate-source voltage of 10V. - Drain-source voltage rating of 200V. - Maximum power dissipation of 1.6W at a junction temperature of 70°C. - On-state drain-source resistance of 0.8-1.0 ohms for a gate voltage of 10V and drain current of 1.0A. - Gate threshold voltage of 2V.

Author

Jean-Pierre Tremblay

Language

EN