Can I read C–V analysis of rapidly thermal annealed SF6 plasma treated AlGaN/GaN heterostructures on EtoBox?

C–V analysis of rapidly thermal annealed SF6 plasma treated AlGaN/GaN heterostructures by J. Osvald; T. Lalinský; G. Vanko; Š. Haščík; A. Vincze is a Materials Science article available to read on EtoBox.

What is C–V analysis of rapidly thermal annealed SF6 plasma treated AlGaN/GaN heterostructures about?

We studied influence of rapid thermal annealing on electrical parameters of SF 6 plasma treated AlGaN/GaN heterostructures. The main emphasis by the evaluation was laid on C-V measurement and simulation, but also I-V and SIMS measurement were used. It was found that the diminished sheet carrier concentration of a two-dimensional electron gas after plasma treatment recovered significantly at the temperature of 500 • C. By using C-V measurement, it was possible to assess besides the changes of the two-dimensional electron gas concentration after annealing also the changes in the Schottky barrier heights and to find out the doping concentration in AlGaN barrier and GaN channel layer. The trend in Schottky barrier height changes after annealing was confirmed also by I-V measurement.

Who reads C–V analysis of rapidly thermal annealed SF6 plasma treated AlGaN/GaN heterostructures?

Author

J. Osvald; T. Lalinský; G. Vanko; Š. Haščík; A. Vincze

Publisher

Elsevier Science; Elsevier ; Elsevier BV (ISSN 0169-4332)

Published

2010

Language

EN

Field

Materials Science (Physical Sciences)