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About this Engineering article
First MOS transistors on insulator by silicon saturated liquid solution epitaxy by Zingg, R.P.; Nagel, N.; Bergmann, R.; Bauser, E.; Hofflinger, B.; Queisser, H.J. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Zingg, R.P.; Nagel, N.; Bergmann, R.; Bauser, E.; Hofflinger, B.; Queisser, H.J.
- Publisher
- IEEE; Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 0741-3106)
- Published
- 1992
- Language
- EN
- Field
- Engineering (Physical Sciences)
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