Opening book details…
About this Engineering article
Analytical drain current and threshold voltage model and device design of short-channel Si nanowire transistors by Tanaka, Chika; Hagishima, Daisuke; Uchida, Ken; Numata, Toshinori is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Tanaka, Chika; Hagishima, Daisuke; Uchida, Ken; Numata, Toshinori
- Publisher
- Elsevier Science; Elsevier ; Elsevier Ltd.; Elsevier BV (ISSN 0038-1101)
- Published
- 2013
- Field
- Engineering (Physical Sciences)
More by Tanaka, Chika; Hagishima, Daisuke; Uchida, Ken; Numata, Toshinori
Browse all works by Tanaka, Chika; Hagishima, Daisuke; Uchida, Ken; Numata, Toshinori