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About this Engineering article
Ultra-wide bandgap AlGaN metal oxide semiconductor heterostructure field effect transistors with high- k ALD ZrO 2 dielectric by Mollah, Shahab; Gaevski, Mikhail; Chandrashekhar, MVS; Hu, Xuhong; Wheeler, Virginia D.; Hussain, Kamal; Mamun, Abdullah; Floyd, Richard; Ahmad, Iftikhar; Simin, Grigory; Eddy, Charles; Khan, M Asif is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Mollah, Shahab; Gaevski, Mikhail; Chandrashekhar, MVS; Hu, Xuhong; Wheeler, Virginia D.; Hussain, Kamal; Mamun, Abdullah; Floyd, Richard; Ahmad, Iftikhar; Simin, Grigory; Eddy, Charles; Khan, M Asif
- Publisher
- Institute of Physics; IOP Publishing; Institute of Physics Publishing (ISSN 0268-1242)
- Published
- 2019
- Field
- Engineering (Physical Sciences)