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What is Vapor Deposition Oxidation Processes about?

The document discusses two processes for oxidation by vapor deposition when forming an oxide layer on silicon: silane pyrolysis and TEOS deposition. Silane pyrolysis involves reacting silane gas with oxygen at around 400°C to form silicon dioxide and hydrogen. TEOS deposition uses LPCVD to transform liquid TEOS into gas and deposit silicon dioxide on wafers heated to around 750°C.

Author

Anusha Sagi

Language

EN