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Comparative optical characterization of GaN grown by metal-organic vapor phase epitaxy, gas source molecular beam epitaxy and halide vapor phase epitaxy by M. Leroux; B. Beaumont; N. Grandjean; C. Golivet; P. Gibart; J. Massies; J. Leymarie; A. Vasson; A.M. Vasson is a Materials Science article available to read on EtoBox.
What is Comparative optical characterization of GaN grown by metal-organic vapor phase epitaxy, gas source molecular beam epitaxy and halide vapor phase epitaxy about?
This work discusses the near edge photoluminescence and reflectivity of GaN layers grown on sapphire using three different methods. Particular emphasis is given to the importance of strain effects on intrinsic properties, as obtained from reflectivity, and that should be taken into account in the interpretation of luminescence spectra. High quality optical properties are obtained whatever the growth technique, halide vapor phase epitaxy (HVPE), gas source molecular beam epit&xy (GSMBE) and metal-organic vapor phase epitaxy (MOVPE), this last technique providing, at the present stage, the best results.
Who reads Comparative optical characterization of GaN grown by metal-organic vapor phase epitaxy, gas source molecular beam epitaxy and halide vapor phase epitaxy?
It is typically read by researchers, students, and practitioners in Materials Science.
- Author
- M. Leroux; B. Beaumont; N. Grandjean; C. Golivet; P. Gibart; J. Massies; J. Leymarie; A. Vasson; A.M. Vasson
- Publisher
- Elsevier Science; Elsevier ; Elsevier Ltd; Elsevier BV (ISSN 0921-5107)
- Published
- 1997
- Language
- EN
- Field
- Materials Science (Physical Sciences)